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| ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC 60N20 VDSS ID25 RDS(on) trr = 200 = 60 = 33 250 V A m ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 200 200 20 30 60 240 60 30 1.0 5 230 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C g ISOPLUS 220TM G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain, 1.6 mm (0.062 in.) from case for 10 s 300 3 Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsicRectifier Applications l DC-DC converters l Batterychargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 100 TJ = 25C TJ = 125C V V nA VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 A V DS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 V DS = VDSS VGS = 0 V V GS = 10 V, ID = IT Notes 1, 2 25 A 1 mA 33 m (c) 2001 IXYS All rights reserved 98843 (6/01) IXFC 60N20 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 40 5200 V GS = 0 V, VDS = 25 V, f = 1 MHz 880 260 38 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 2.5 (External) 63 85 26 155 V GS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2 38 55 0.90 0.30 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS220 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = IT Notes 1, 2 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = 25A -di/dt = 100 A/s, VR = 50 V Test Conditions V GS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 240 1.5 250 0.7 8 A A V ns C A Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Note: 1. Pulse test, t 300 s, duty cycle d 2 % 2. IT = 30A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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